2003 · 14 citations · 4 references
Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorNanoelectronicsSaturation RegionApplied PhysicsAluminum Gallium NitrideGan Power DeviceTransconductance DispersionRf StressAlgan/gan HemtsPower ElectronicsPower CharacteristicsMicroelectronicsOptoelectronics
The impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs are reported. Reduced drain current ( /spl sim/ 67 mA/mm in the saturation region) and similar output power and power-added efficiency were found after RF stress. Transconductance dispersion is small before and after RF stress while output resistance dispersion reduces after RF stress. Tests performed under UV light suggest that the observed results may be attributed to trapping in the AlGaN/GaN HEMT layers.
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AlGaN/AlN/GaN high-power microwave HEMT
L. Shen, S. Heikman, Brendan Moran et al. · IEEE Electron Device Letters · 2001 · 482 citations
Wide-bandgap Semiconductor, Alloy Scattering, Electrical Engineering +12
Current instabilities in GaN-based devices
I. Daumiller, D. Théron, Christophe Gaquière et al. · IEEE Electron Device Letters · 2001 · 150 citations
Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14
Large signal frequency dispersion of AlGaN/GaNheterostructure fieldeffect transistors
E. Kohn, I. Daumiller, P. Schmid et al. · Electronics Letters · 1999 · 128 citations