Pouya Valizadeh

Investigation of the Impact of Al Mole-Fraction on the Consequences of RF Stress on<tex>$hbox Al_xhbox Ga_1-xhbox N/GaN$</tex>MODFETs

Pouya Valizadeh, D. Pavlidis · IEEE Transactions on Electron Devices · 2005 · 52 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +15

Effects of RF and DC stress on AlGaN/GaN MODFETs: a low-frequency noise-based investigation

Pouya Valizadeh, D. Pavlidis · IEEE Transactions on Device and Materials Reliability · 2005 · 45 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Reverse Gate-Current of AlGaN/GaN HFETs: Evidence of Leakage at Mesa Sidewalls

Hassan Rahbardar Mojaver, Pouya Valizadeh · IEEE Transactions on Electron Devices · 2016 · 27 citations

Wide-bandgap Semiconductor, Reverse Gate-current, Electrical Engineering +13

Fin- and Island-Isolated AlGaN/GaN HFETs

Pouya Valizadeh, Bandar AlOtaibi · IEEE Transactions on Electron Devices · 2011 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs

Shawn S. H. Hsu, Pouya Valizadeh, D. Pavlidis et al. · 2003 · 14 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +13