Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2007 · 22 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsHigh-frequency Semiconductor DevicesIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor PhysicsHeterojunction Bipolar TransistorsSilicon Germanium Bipolar TransistorTerahertz Semiconductor Devices
We report record <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f<sub>max</sub></i> for a silicon-based transistor, and the first combined set of <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f<sub>T</sub></i> + <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f<sub>max</sub></i> above one-terahertz for silicon-germanium heterojunction bipolar transistors (SiGe HBTs). Peak <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f<sub>max</sub></i> of 618 GHz and <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f<sub>T</sub></i> of 463 GHz at 4.5 K (chuck temperature) were measured for a scaled 0.12 times 2.5 <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">μm<sup>2</sup>2</i> SiGe HBT (343 / 309 GHz at 300 K), at a breakdown voltage BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> of 1.62 V (1.70 at 300 K), yielding a record <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">f<sub>T</sub></i> × BV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CEO</sub> product of 750GHz-V (510 GHz-V at 300 K). An examination of base transport in these devices at low temperatures suggests non-equilibrium effects are operative.
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Half-terahertz operation of SiGe HBTs
R. Krithivasan, Yuan Lu, John D. Cressler et al. · IEEE Electron Device Letters · 2006 · 101 citations