IEEE Transactions on Electron Devices · 2004 · 46 citations · 20 references
EngineeringBorder TrapsSilicon On InsulatorHfsion DielectricSemiconductor DeviceRf SemiconductorNanoelectronicsSimple ApproachUltrathin Silicon OxideMaterials ScienceMaterials EngineeringElectrical EngineeringImproved Nmosfet PerformancesOxide ElectronicsBias Temperature InstabilityTime-dependent Dielectric BreakdownSemiconductor Device FabricationMicroelectronicsApplied Physics
A simple technique to form high-quality hafnium silicon oxynitride (HfSiON) by rapid thermal processing oxidation of physical vapor deposition hafnium nitride (HfN) thin films on ultrathin silicon oxide (SiO/sub 2/) or silicon oxynitride (SiON) layer is presented. Metal TaN gate electrode is also introduced into such HfSiON stacks. Excellent performances including large electron mobility (85%SiO/sub 2/at0.2 MV/cm), low leakage current (10/sup -4/ of SiO/sub 2/), and superior time-dependant dielectric breakdown reliability are achieved in HfSiON/SiO/sub 2/ stacks, and these results suggest such stacks are very promising for the low-power SOC applications in the near future. In addition, the improvement of the electron mobility in this HfSiON/SiO/sub 2/ stack by a reduction of the border traps in the HfSiON dielectric is demonstrated.
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Band offsets of wide-band-gap oxides and implications for future electronic devices
John Robertson · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 2K citations
Wide-bandgap Semiconductor, Engineering, Wide-band-gap Oxides +17
Massimo V. Fischetti, Deborah A. Neumayer, E. Cartier · Journal of Applied Physics · 2001 · 735 citations
Engineering, Optoelectronic Devices, Silicon On Insulator +20