IEEE Electron Device Letters · 2009 · 25 citations · 10 references
EngineeringMaterials EngineeringMaterials ScienceMicroelectromechanical SystemsMicroelectronicsMicrofabricationMems CharacterizationMems FabricationMems SensorsMicroelectromechanical SensorsMicrofabrication MaterialsRaman SpectroscopyFabricationGallium NitrideMicrofabricated SensorsMicromachined SensorsMicroscale SensingResidual Stress RedistributionSensingStress Distribution
In this letter, piezosensitive elements featuring large-size suspended gallium nitride (GaN) microstructures are fabricated with a two-step dry-release technique using the GaN-on-Si platform. The suspended microstructures are integrated with highly piezosensitive AlGaN/GaN heterostructures as sensing units to realize the GaN-based integrated microsensors. To characterize the residual-stress distribution of the fabricated microstructures, micro-Raman spectroscopy is employed. A microaccelerometer structure with a 250 times 250-mum <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> proof-mass area is fabricated with the proposed fabrication technique, and the piezoresponse properties of the integrated sensing elements are characterized through bending experiment.
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Fabrication and performance of GaN electronic devices
S. J. Pearton, F. Ren, A.P. Zhang et al. · Materials Science and Engineering R Reports · 2000 · 498 citations
Piezoelectric GaN sensor structures
Tom Zimmermann, Martin Neuburger, P. Benkart et al. · IEEE Electron Device Letters · 2006 · 126 citations