Concepedia

Transient enhanced diffusion in preamorphized silicon: the role of the surface

N. E. B. Cowern, Daniel Alquier, M. Omri, A. Claverie, A. Nejim

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 49 citations · 13 references

DOI

Concepts

References

13

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 619 citations

, , +17

Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles

N. E. B. Cowern, K.T.F. Janssen, H.F.F. Jos · Journal of Applied Physics · 1990 · 206 citations

, , +15

Ostwald ripening of end-of-range defects in silicon

Caroline Bonafos, D. Mathiot, A. Claverie · Journal of Applied Physics · 1998 · 172 citations

, , +17

Interactions of ion-implantation-induced interstitials with boron at high concentrations in silicon

T. E. Haynes, D. J. Eaglesham, P.A. Stolk et al. · Applied Physics Letters · 1996 · 88 citations

, , +17

Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon

H. S. Chao, Peter B. Griffin, J.D. Plummer · Applied Physics Letters · 1996 · 48 citations

, , +17