Current Status and Opportunities of Organic Thin-Film Transistor Technologies

Xiaojun Guo, Yong Xu, Simon Ogier, +11

IEEE Transactions on Electron Devices

Otft TechnologyOtft TechnologiesEngineeringOrganic ElectronicsNew Applications +14

Smart textile lighting/display system with multifunctional fibre devices for large scale smart home and IoT applications

Hyung Woo Choi, Dong‐Wook Shin, Jiajie Yang, +44

Nature Communications

Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation

T. Komoda, James Kelly, F. Cristiano, +6

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Materials ScienceIon ImplantationPhotoluminescenceEngineeringVisible Photoluminescence +5

SiC buried layer formation by ion beam synthesis at 950 °C

A. Nejim, P.L.F. Hemment, J. Stoëmenos

Applied Physics Letters

Materials EngineeringMaterials ScienceElectrical EngineeringIon ImplantationEngineering +11

An investigation of as-implanted material formed by high dose 40 keV oxygen implantation into silicon at 550 °C

Y. Li, John A. Kilner, Richard J. Chater, +3

Journal of Applied Physics

EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device +15

Truly form-factor–free industrially scalable system integration for electronic textile architectures with multifunctional fiber devices

Sanghyo Lee, Hyung Woo Choi, Cátia Lopes Figueiredo, +45

Science Advances

Smart TextileEngineeringTechnical TextileWearable TechnologyE-textiles +14

Transient enhanced diffusion in preamorphized silicon: the role of the surface

N. E. B. Cowern, Daniel Alquier, M. Omri, +2

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Materials ScienceEngineeringDiffusion ResistancePhysicsSurface Science +5

In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures

Eric A. Stach, R. Hull, J. C. Bean, +2

Microscopy and Microanalysis

Materials ScienceIon ImplantationSitu StudiesPoint DefectsEngineering +12

Accurate RBS measurement of ion implant doses in silicon

G. Boudreault, C. Jeynes, E. Wendler, +3

Surface and Interface Analysis

Certified Reference MaterialEngineeringIon Beam InstrumentationTreatment VerificationRadiation Testing +19

Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects?

M. Omri, Caroline Bonafos, A. Claverie, +5

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms

Materials ScienceEngineeringCrystalline DefectsPhysicsSurface Science +6