P.L.F. Hemment

Improved subthreshold characteristics of n-channel SOI transistors

J. Davis, A.E. Glaccum, K.J. Reeson et al. · IEEE Electron Device Letters · 1986 · 87 citations

Electrical Engineering, Engineering, Oxygen Implantation +10

Visible photoluminescence at room temperature from microcrystalline silicon precipitates in SiO2 formed by ion implantation

T. Komoda, James Kelly, F. Cristiano et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1995 · 80 citations

Materials Science, Ion Implantation, Photoluminescence +7

Formation of buried insulating layers in silicon by the implantation of high doses of oxygen

P.L.F. Hemment, E.A. Maydell-Ondrusz, K.G. Stephens et al. · Nuclear Instruments and Methods in Physics Research · 1983 · 72 citations

Materials Science, Ion Implantation, Engineering +8

Silicon on Insulator Formed By O⁺ OR N⁺ Ion Implantation

P.L.F. Hemment · MRS Proceedings · 1985 · 71 citations

Materials Science, Insulator Formed, Ion Implantation +6

Silicon-on-insulator and buried metals in semiconductors

Johannes Sturm, C.K. Chen, L. N. Pfeiffer et al. · OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information) · 1988 · 68 citations

Engineering, Thin Film Process Technology, Silicon On Insulator +19