E.A. Maydell-Ondrusz

Formation of buried insulating layers in silicon by the implantation of high doses of oxygen

P.L.F. Hemment, E.A. Maydell-Ondrusz, K.G. Stephens et al. · Nuclear Instruments and Methods in Physics Research · 1983 · 72 citations

Engineering, Materials Engineering, Materials Science +12

Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

P.L.F. Hemment, E.A. Maydell-Ondrusz, KG Stevens et al. · Vacuum · 1984 · 61 citations

Engineering, Materials Engineering, Materials Science +16

SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation

John A. Kilner, Richard J. Chater, P.L.F. Hemment et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 48 citations

Engineering, Materials Engineering, Materials Science +15

A model for the evolution of implanted oxygen profiles in silicon

E.A. Maydell-Ondrusz, I. H. Wilson · Thin Solid Films · 1984 · 45 citations

Engineering, Materials Engineering, Materials Science +11

Mössbauer Study of ⁵⁷Fe Implanted in Silicon

J. Sawicki, Barbara Sawicka, S. Łazarski et al. · physica status solidi (b) · 1973 · 25 citations

Natural Sciences, Materials Engineering, Materials Science +11