Concepedia

SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation

John A. Kilner, Richard J. Chater, P.L.F. Hemment, R. F. Peart, E.A. Maydell-Ondrusz, M.R. Taylor, R.P. Arrowsmith

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 48 citations · 8 references

DOI

Concepts

References

8

Oxygen-concentration dependence of secondary ion yield enhancement

K. Wittmaack · Surface Science · 1981 · 138 citations

, , +9

An 18O Study of the Oxidation Mechanism of Silicon in Dry Oxygen

F. Rochet, B. Agius, S. Rigo · Journal of The Electrochemical Society · 1984 · 101 citations

, , +17

Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

C. G. Tuppen, M.R. Taylor, P.L.F. Hemment et al. · Applied Physics Letters · 1984 · 71 citations

, , +17

Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

P.L.F. Hemment, E.A. Maydell-Ondrusz, KG Stevens et al. · Vacuum · 1984 · 61 citations

, , +16

The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidation

K. Wittmaack · Surface Science · 1977 · 58 citations

, , +12