R.P. Arrowsmith

Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

C. G. Tuppen, M.R. Taylor, P.L.F. Hemment et al. · Applied Physics Letters · 1984 · 71 citations

Engineering, Materials Engineering, Materials Science +17

High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen

P.L.F. Hemment, R. F. Peart, Maoqing Yao et al. · Applied Physics Letters · 1985 · 58 citations

Engineering, Materials Engineering, Materials Science +17

SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation

John A. Kilner, Richard J. Chater, P.L.F. Hemment et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 48 citations

Engineering, Materials Engineering, Materials Science +15

Silicon on insulator structures formed by the implantation of high doses of reactive ions

P.L.F. Hemment, R. F. Peart, Maoqing Yao et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1985 · 28 citations

Engineering, Materials Engineering, Materials Science +14

Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon-on-insulator films formed by oxygen implantation

S. Cristoloveanu, J. H. Lee, J. Pumfrey et al. · Journal of Applied Physics · 1986 · 27 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +17