P.L.F. Hemment

High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing

G. K. Celler, P.L.F. Hemment, K. W. West et al. · Applied Physics Letters · 1986 · 156 citations

Engineering, Materials Engineering, Materials Science +17

Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

C. G. Tuppen, M.R. Taylor, P.L.F. Hemment et al. · Applied Physics Letters · 1984 · 71 citations

Engineering, Materials Engineering, Materials Science +17

Ion beam synthesis of thin buried layers of SiO2 in silicon

P.L.F. Hemment, KJ Reeson, R.J. Chater et al. · Vacuum · 1986 · 64 citations

Engineering, Materials Engineering, Materials Science +12

Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

P.L.F. Hemment, E.A. Maydell-Ondrusz, KG Stevens et al. · Vacuum · 1984 · 61 citations

Engineering, Materials Engineering, Materials Science +16

High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen

P.L.F. Hemment, R. F. Peart, Maoqing Yao et al. · Applied Physics Letters · 1985 · 58 citations

Engineering, Materials Engineering, Materials Science +17