Oxygen distributions in synthesized SiO2 layers formed by high dose O+ implantation into silicon

The microscopy of semiconducting materials

A.G. Cullis · Journal of Microscopy · 1980 · 284 citations

Materials Science, Engineering, Electron Microscopy +6

Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO₂ and Si₃N₄ Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon

Satoshi Maeyama, Kenji Kajiyama · Japanese Journal of Applied Physics · 1982 · 70 citations

Engineering, Buried Sio 2, Integrated Circuits +16

A study of silicon oxides prepared by oxygen implantation into silicon

M.H. Badawi, K.V. Anand · Journal of Physics D Applied Physics · 1977 · 56 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Characteristics of MOSFETs fabricated in silicon-on-insulator material formed by high-dose oxygen ion implantation

Hon Wai Lam, Russell F. Pinizzotto, Huihua Yuan et al. · Electronics Letters · 1981 · 48 citations

Rutherford backscattering analysis of oxide layers formed by ion implantation into single-crystal silicon

S.S. Gill, I. H. Wilson · Thin Solid Films · 1978 · 41 citations

Materials Science, Ion Implantation, Engineering +9