I. H. Wilson

The effects of self-ion bombardment (30–500 keV) on the surface topography of single-crystal germanium

I. H. Wilson · Journal of Applied Physics · 1982 · 133 citations

Engineering, Microscopy, Germanium Surfaces +18

Short Range Order and the Nature of Defects and Traps in Amorphous Silicon Oxynitride Governed by the Mott Rule

V. A. Gritsenko, Jianbin Xu, R. Kwok et al. · Physical Review Letters · 1998 · 78 citations

Engineering, Mott Rule, Optoelectronic Devices +22

Frequency and Temperature Dependence of Electrical Breakdown at 21, 30, and 39 GHz

Hans-Heinrich Braun, S. Döbert, I. H. Wilson et al. · Physical Review Letters · 2003 · 72 citations · Full text

Oxygen gettering and oxide degradation during annealing of Si/SiO2/Si structures

R. A. B. Devine, W. L. Warren, Jianbin Xu et al. · Journal of Applied Physics · 1995 · 70 citations

Engineering, Silicon On Insulator, Semiconductors +17

Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method

Guangda Hu, I. H. Wilson, Jianbin Xu et al. · Applied Physics Letters · 1999 · 66 citations

Materials Science, Materials Engineering, Magnetic Properties +13