K.G. Stephens

Formation of buried insulating layers in silicon by the implantation of high doses of oxygen

P.L.F. Hemment, E.A. Maydell-Ondrusz, K.G. Stephens et al. · Nuclear Instruments and Methods in Physics Research · 1983 · 72 citations

Materials Science, Ion Implantation, Engineering +8

Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAs

S.S. Kular, B.J. Sealy, K.G. Stephens et al. · Solid-State Electronics · 1980 · 70 citations

Materials Science, Electrical Engineering, Ion Implantation +6

High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen

P.L.F. Hemment, R. F. Peart, Maoqing Yao et al. · Applied Physics Letters · 1985 · 58 citations

Engineering, Si-si3n4 Interfaces, Integrated Circuits +16

Doping of III–V compound semiconductors by ion implantation

K.G. Stephens · Nuclear Instruments and Methods in Physics Research · 1983 · 49 citations

Semiconductors, Ion Implantation, Engineering +4

Laser annealing of capped and uncapped GaAs

S.S. Kular, B.J. Sealy, M.H. Badawi et al. · Electronics Letters · 1979 · 39 citations

Materials Science, Ion Implantation, Engineering +12