Electronics Letters · 1979 · 39 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceIon ImplantationLaser PhysicsLaser Surface ProcessingSemiconductor Device MaterialsSemiconductor LasersSemiconductor SurfacesAnnealingIon Implantation EffectsLaser AnnealingLaser Surface AnnealingPost-implantation AnnealingPrecipitates
Ion-implanted GaAs samples have been annealed using a Q-switched ruby laser. Both Si3N4 capped and uncapped samples decomposed and gallium precipitates were formed at the surface. The gallium could be removed by dissolution in HCl to leave high-quality GaAs.
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Ohmic contacts produced by laser-annealing Te-implanted GaAs
P. A. Barnes, H. J. Leamy, J. M. Poate et al. · Applied Physics Letters · 1978 · 62 citations
Electrical properties of laser-annealed donor-implanted GaAs
B.J. Sealy, S.S. Kular, K.G. Stephens et al. · Electronics Letters · 1978 · 21 citations