G. R. Booker - Concepedia

Author

G. R. Booker

Also Known As

G Booker, G R Booker, G. Booker, G. R. BOOKER, G. R. Booker, G. R. Booker†, G. R.Booker, G. Roger Booker, G.R Booker, G.R booker

259

Publications

5.2K

Citations

H-Index

110

Concepts

All Affiliations

University of Oxford Imperial College London University of Surrey University of Cambridge Westinghouse Electric (United States)

About

G. R. Booker is an author at University of Oxford specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	37	104	4.1K
2	Applied Physics	36	107	4.2K
3	Natural Sciences	5	5	305
4	Medicine	2	2	27
5	Biomedical Engineering	2	2	75

G. R. Booker

114

Publications

4.7K

Citations

H-Index

Page 1

	Year	Citations
Electromagnetic diffraction of light focused through a planar interface between materials of mismatched refractive indices: an integral representation Péter Török, Z. Laczik, G. R. Booker Journal of the Optical Society of America A Optical MaterialsEngineeringWave OpticNegative-index MetamaterialOptic Design	1995	440
Some comments on the interpretation of the ‘kikuchi-like reflection patterns’ observed by scanning electron microscopy G. R. Booker, Annabelle Shaw, M. J. Whelan, Philosophical magazine	1967	173
An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations G.R. Wolstenholme, N Jorgensen, P. Ashburn, Journal of Applied Physics EngineeringIntegrated CircuitsInterfacial OxideSilicon On InsulatorSemiconductor Device	1987	172
A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour B.A. Joyce, R. R. Bradley, G. R. Booker Philosophical magazine EngineeringChemistrySilicon On InsulatorNanoelectronicsSilicon Surface	1967	133
Crystallographic Imperfections in Epitaxially Grown Silicon G. R. Booker, R. Stickler Journal of Applied Physics Crystallographic ImperfectionsEpitaxial GrowthEngineeringPhysicsEpitaxial Si Layers	1962	123
Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers Andrew G. Norman, G. R. Booker Journal of Applied Physics	1985	116
Mechanism for CuPt-type ordering in mixed III–V epitaxial layers B. Philips, Andrew G. Norman, Tae‐Yeon Seong, Journal of Crystal Growth Epitaxial GrowthApplied PhysicsCupt-type OrderingMolecular Beam Epitaxy	1994	110
Method of preparing Si and Ge specimens for examination by transmission electron microscopy G. R. Booker, R. Stickler British Journal of Applied Physics EngineeringTransmission Electron MicroscopyMicroscopyPlasma ProcessingChemical Engineering	1962	105
Diffraction contrast analysis of two-dimensional defects present in silicon after annealing G. R. Booker, W. J. Tunstall Philosophical magazine Diffraction Contrast AnalysisEngineeringDiffraction ContrastSilicon On InsulatorDefect Tolerance	1966	99
Observation of {111} ordering and [110] modulation in molecular beam epitaxial GaAs1−<i>y</i>Sb<i>y</i> layers: Possible relationship to surface reconstruction occurring during layer growth I. J. Murgatroyd, Andrew G. Norman, G. R. Booker Journal of Applied Physics SemiconductorsMaterials SciencePossible RelationshipEngineeringCrystalline Defects	1990	94

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