B.A. Joyce

Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying

P. B. Joyce, T. J. Krzyzewski, Gavin R. Bell et al. · Physical review. B, Condensed matter · 1998 · 296 citations

Materials Science, Semiconductors, Wetting Layer +13

Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001)

T. Shitara, Dimitri D. Vvedensky, Mark Richard Wilby et al. · Physical review. B, Condensed matter · 1992 · 234 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14

Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations

P.K. Larsen, J. F. van der Veen, A. Mazur et al. · Physical review. B, Condensed matter · 1982 · 169 citations

Ii-vi Semiconductor, Engineering, Physics +13

Self-organized growth on GaAs surfaces

B.A. Joyce, Dimitri D. Vvedensky · Materials Science and Engineering R Reports · 2004 · 149 citations

Semiconductors, Engineering, Surface Science +5

Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

Hiroshi Yamaguchi, J. G. Belk, X. M. Zhang et al. · Physical review. B, Condensed matter · 1997 · 148 citations

Materials Science, Semiconductors, Epitaxial Growth +15