B.A. Joyce - Concepedia

Author

B.A. Joyce

Imperial College London

Also Known As

B A Joyce, B Joyce, B. A. JOYCE, B. A. Joyce, B. Joyce, B.A Joyce, B.A. JOYCE, B.A. Joyce, Brona Joyce, Bruce A Joyce

246

Publications

5.8K

Citations

H-Index

Concepts

All Affiliations

Imperial College London John Innes Centre University of London University of Oxford

About

B.A. Joyce is an author at Imperial College London specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	40	111	5.1K
2	Applied Physics	40	114	5.1K
3	Natural Sciences	12	13	652
4	Medicine	1	1	15
5	Biology	1	1	15

B.A. Joyce

118

Publications

5.3K

Citations

H-Index

Page 1

	Year	Citations
Composition of InAs quantum dots on GaAs(001): Direct evidence for (In,Ga)As alloying P. B. Joyce, T. J. Krzyzewski, Gavin R. Bell, Physical review. B, Condensed matter Materials ScienceSemiconductorsWetting LayerIi-vi SemiconductorEngineering	1998	296
Step-density variations and reflection high-energy electron-diffraction intensity oscillations during epitaxial growth on vicinal GaAs(001) T. Shitara, Dimitri D. Vvedensky, Mark Richard Wilby, Physical review. B, Condensed matter Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsSystematic Measurements	1992	234
Surface electronic structure of GaAs(001)-(2×4): Angle-resolved photoemission and tight-binding calculations P.K. Larsen, J. F. van der Veen, A. Mazur, Physical review. B, Condensed matter Ii-vi SemiconductorEngineeringPhysicsNatural SciencesApplied Physics	1982	169
Self-organized growth on GaAs surfaces B.A. Joyce, Dimitri D. Vvedensky Materials Science and Engineering R Reports SemiconductorsEngineeringSurface ScienceApplied PhysicsSelf-organized Growth	2004	149
Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A Hiroshi Yamaguchi, J. G. Belk, X. M. Zhang, Physical review. B, Condensed matter Materials ScienceSemiconductorsEpitaxial GrowthCritical Layer ThicknessMisfit Dislocations	1997	148
Effects of diffraction conditions and processes on rheed intensity oscillations during the MBE growth of GaAs Jianping Zhang, J.H. Neave, Peter J. Dobson, Applied Physics A EngineeringPhysicsOptical PropertiesCrystal Growth TechnologyMbe Growth	1987	138
A study of nucleation in chemically grown epitaxial silicon films using molecular beam techniques III. Nucleation rate measurements and the effect of oxygen on initial growth behaviour B.A. Joyce, R. R. Bradley, G. R. Booker Philosophical magazine EngineeringChemistrySilicon On InsulatorNanoelectronicsSilicon Surface	1967	133
Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy J. G. Belk, C. F. McConville, J. L. Sudijono, Surface Science	1997	128
The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces A. R. Avery, D.M Homes, J. L. Sudijono, Surface Science SemiconductorsEngineeringTunneling MicroscopyPhysicsMicroscopy	1995	121
Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy Hiroshi Yamaguchi, M.R. Fahy, B.A. Joyce Applied Physics Letters Materials ScienceEpitaxial GrowthEngineeringPhysicsThin Inas Films	1996	120

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