X. M. Zhang

Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

Hiroshi Yamaguchi, J. G. Belk, X. M. Zhang et al. · Physical review. B, Condensed matter · 1997 · 148 citations

Materials Science, Semiconductors, Epitaxial Growth +15

Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>/</mml:mo></mml:math>GaAs(110) Heteroepitaxy

J. G. Belk, J. L. Sudijono, X. M. Zhang et al. · Physical Review Letters · 1997 · 100 citations

Engineering, Surface Contrast, Semiconductor Nanostructures +20

A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes

B.A. Joyce, J. L. Sudijono, J. G. Belk et al. · Japanese Journal of Applied Physics · 1997 · 85 citations

Semiconductors, Materials Science, Rate Equations +15

Reflection high-energy electron diffraction and optical measurements on the molecular-beam epitaxial growth of one and two monolayers of InAs on GaAs

S. Dosanjh, P. Dawson, M.R. Fahy et al. · Journal of Applied Physics · 1992 · 40 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Reflection high energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs(110) films

J.H. Neave, Jianping Zhang, X. M. Zhang et al. · Applied Physics Letters · 1993 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Gaas Growth +13