Concepedia

Author

X. M. Zhang

Imperial College London

Also Known As

X. M. Zhang

7

Publications

405

Citations

6

H-Index

18

Concepts

All Affiliations

Imperial College London
XM

About

X. M. Zhang is an author at Imperial College London specializing in physics, applied physics, and engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

6

6

405

2

Applied Physics

6

6

405

3

Materials Science

4

4

373

4

Electrical Engineering

2

2

32

5

Materials Engineering

1

1

100

X. M. Zhang

×

6

Publications

405

Citations

6

H-Index

YearCitations

Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

Hiroshi Yamaguchi, J. G. Belk, X. M. Zhang,

Physical review. B, Condensed matter

1997

148

Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>/</mml:mo></mml:math>GaAs(110) Heteroepitaxy

J. G. Belk, J. L. Sudijono, X. M. Zhang,

Physical Review Letters

1997

100

A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes

B.A. Joyce, J. L. Sudijono, J. G. Belk,

Japanese Journal of Applied Physics

1997

85

Reflection high-energy electron diffraction and optical measurements on the molecular-beam epitaxial growth of one and two monolayers of InAs on GaAs

S. Dosanjh, P. Dawson, M.R. Fahy,

Journal of Applied Physics

1992

40

Reflection high energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs(110) films

J.H. Neave, Jianping Zhang, X. M. Zhang,

Applied Physics Letters

1993

19

Surface segregation effects of In in GaAs

S. Dosanjh, X. M. Zhang, D. Sansom,

Journal of Applied Physics

1993

13

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