J. L. Sudijono

Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

Hiroshi Yamaguchi, J. G. Belk, X. M. Zhang et al. · Physical review. B, Condensed matter · 1997 · 148 citations

Materials Science, Semiconductors, Epitaxial Growth +15

Surface alloying at InAsGaAs interfaces grown on (001) surfaces by molecular beam epitaxy

J. G. Belk, C. F. McConville, J. L. Sudijono et al. · Surface Science · 1997 · 128 citations

The As-terminated reconstructions formed by GaAs(001): a scanning tunnelling microscopy study of the (2 × 4) and c(4 × 4) surfaces

A. R. Avery, D.M Homes, J. L. Sudijono et al. · Surface Science · 1995 · 121 citations

Semiconductors, Engineering, Tunneling Microscopy +9

Surface Contrast in Two Dimensionally Nucleated Misfit Dislocations in InAs<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>/</mml:mo></mml:math>GaAs(110) Heteroepitaxy

J. G. Belk, J. L. Sudijono, X. M. Zhang et al. · Physical Review Letters · 1997 · 100 citations

Engineering, Surface Contrast, Semiconductor Nanostructures +20

A Scanning Tunneling Microscopy-Reflection High Energy Electron Diffraction-Rate Equation Study of the Molecular Beam Epitaxial Growth of InAs on GaAs(001), (110) and (111)A–Quantum Dots and Two-Dimensional Modes

B.A. Joyce, J. L. Sudijono, J. G. Belk et al. · Japanese Journal of Applied Physics · 1997 · 85 citations

Semiconductors, Materials Science, Rate Equations +15