M.R. Fahy - Concepedia

Author

M.R. Fahy

Imperial College London

Also Known As

M R Fahy, M. R. Fahy, M.R Fahy, M.R. Fahy, Michael R Fahy, Michael R. Fahy, Michael R. Fahy Michael R. Fahy

Publications

729

Citations

H-Index

Concepts

All Affiliations

Imperial College London Fraunhofer Institute for Applied Solid State Physics Japan Petroleum Energy Center Philips (United Kingdom)University of Nottingham

About

M.R. Fahy is an author at Imperial College London specializing in applied physics, physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	14	19	619
2	Engineering	13	18	604
3	Electrical Engineering	7	7	130
4	Materials Engineering	2	2	41
5	Chemistry	1	1	16

M.R. Fahy

Publications

631

Citations

H-Index

Page 1

	Year	Citations
Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A Hiroshi Yamaguchi, J. G. Belk, X. M. Zhang, Physical review. B, Condensed matter Materials ScienceSemiconductorsEpitaxial GrowthCritical Layer ThicknessMisfit Dislocations	1997	148
Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy Hiroshi Yamaguchi, M.R. Fahy, B.A. Joyce Applied Physics Letters Materials ScienceEpitaxial GrowthEngineeringPhysicsThin Inas Films	1996	120
Reflection high-energy electron diffraction study of the GaAs:Si:GaAs system M.R. Fahy, M. J. Ashwin, J. J. Harris, Applied Physics Letters SemiconductorsGaas SystemSemiconductor TechnologyEpitaxial GrowthEngineering	1992	43
Reflection high-energy electron diffraction and optical measurements on the molecular-beam epitaxial growth of one and two monolayers of InAs on GaAs S. Dosanjh, P. Dawson, M.R. Fahy, Journal of Applied Physics Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1992	40
Reflection high-energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs (111)A M.R. Fahy, K. Sato, B.A. Joyce Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	1994	40
X-ray characterization of Si δ-doping in GaAs L. Hart, M.R. Fahy, R.C. Newman, Applied Physics Letters SemiconductorsMaterials ScienceSemiconductor TechnologyEngineeringPhysics	1993	28
The Growth of High Quality GaAs on GaAs (111)A K. Sato, M.R. Fahy, B.A. Joyce Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringMaterials EngineeringGrowth Condition Dependence	1994	25
Reflection high energy electron diffraction intensity oscillation study of the growth of GaAs on GaAs(111)A K. Sato, M.R. Fahy, B.A. Joyce Surface Science Wide-bandgap SemiconductorEngineeringPhysicsApplied PhysicsOptoelectronics	1994	22
Lattice locations of silicon atoms in δ-doped layers in GaAs at high doping concentrations R. C. Newman, M. J. Ashwin, M.R. Fahy, Physical review. B, Condensed matter EngineeringRaman MeasurementsSemiconductor MaterialsOptoelectronic DevicesSilicon On Insulator	1996	22
Iodine implantation of polymeric phthalocyanines A.J. Dann, M.R. Fahy, C. Jeynes, Journal of Physics D Applied Physics Chemical DopingEngineeringOrganic ElectronicsDc ConductivityOrganic Chemistry	1986	16

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