M.R. Fahy

Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs(111)A

Hiroshi Yamaguchi, J. G. Belk, X. M. Zhang et al. · Physical review. B, Condensed matter · 1997 · 148 citations

Materials Science, Semiconductors, Epitaxial Growth +15

Inhibitions of three dimensional island formation in InAs films grown on GaAs (111)A surface by molecular beam epitaxy

Hiroshi Yamaguchi, M.R. Fahy, B.A. Joyce · Applied Physics Letters · 1996 · 120 citations

Materials Science, Epitaxial Growth, Engineering +14

Reflection high-energy electron diffraction study of the GaAs:Si:GaAs system

M.R. Fahy, M. J. Ashwin, J. J. Harris et al. · Applied Physics Letters · 1992 · 43 citations

Semiconductors, Gaas System, Semiconductor Technology +15

Reflection high-energy electron diffraction and optical measurements on the molecular-beam epitaxial growth of one and two monolayers of InAs on GaAs

S. Dosanjh, P. Dawson, M.R. Fahy et al. · Journal of Applied Physics · 1992 · 40 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Reflection high-energy electron diffraction intensity oscillations during the growth by molecular beam epitaxy of GaAs (111)A

M.R. Fahy, K. Sato, B.A. Joyce · Applied Physics Letters · 1994 · 40 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12