G.R. Wolstenholme

An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observations

G.R. Wolstenholme, N Jorgensen, P. Ashburn et al. · Journal of Applied Physics · 1987 · 173 citations

Engineering, Electrical Engineering, Materials Science +17

The production and destruction of the C-related 969 meV absorption band in Si

Gordon Davies, E C Lightowlers, M.C. Carmo et al. · Solid State Communications · 1984 · 24 citations

Natural Sciences, Materials Science, Physics +8

The asymptotes of the base current in bipolar devices

Luís Castañer, P. Ashburn, L.P. Viñas et al. · IEEE Transactions on Electron Devices · 1988 · 17 citations

Engineering, Electrical Engineering, Microelectronics +11

An investigation of the transition from polysilicon emitter to SIS emitter behavior

G.R. Wolstenholme, Damien Browne, P. Ashburn et al. · IEEE Transactions on Electron Devices · 1988 · 17 citations

Engineering, Electrical Engineering, Microelectronics +16

Measurement and modelling of the emitter resistance of polysilicon emitter transistors

G.R. Wolstenholme, P. Ashburn, N Jorgensen et al. · 2003 · 17 citations

Engineering, Electrical Engineering, Materials Science +15