IEEE Electron Device Letters · 1986 · 87 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationDevice ModelingMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsOutput CharacteristicsSiliconSilicon-on-insulator TechnologySlopesSubthreshold OperationTransistor Output Characteristics
It has been found that certain n-channel MOSFET's fabricated on silicon-on-insulator (SOI) substrates formed by oxygen implantation can have <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">\log (I_{d}): V_{gs}</tex> , characteristics with very steep slopes in the subthreshold region. In contradiction to normal models for short-channel transistors on bulk silicon, the slope becomes steeper for shorter gate lengths or higher drain voltages. This effect is shown to be related to the kink in the output characteristics of transistors with floating islands.
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Subthreshold slope of thin-film SOI MOSFET's
J.-P. Colinge · IEEE Electron Device Letters · 1986 · 272 citations
An analytical breakdown model for short-channel MOSFET's
Fu-Chieh Hsu, Ping-Keung Ko, Simon Tam et al. · IEEE Transactions on Electron Devices · 1982 · 131 citations