M. Omri - Concepedia

Author

M. Omri

Centre National de la Recherche Scientifique

Also Known As

M Omri, M. OMRI, M. Omri, Mourad Omri, Omri, M.

Publications

534

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Centre d’Élaboration de Matériaux et d’Études Structurales Laboratoire d'Analyse et d'Architecture des Systèmes University of Surrey Philips (Netherlands)

About

M. Omri is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	459
2	Applied Physics	10	11	459
3	Materials Science	8	8	275
4	Natural Sciences	1	1	18
5	Materials Engineering	1	1	12

M. Omri

Publications

459

Citations

H-Index

Page 1

	Year	Citations
Formation energies and relative stability of perfect and faulted dislocation loops in silicon F. Cristiano, J. Grisolia, B. Colombeau, Journal of Applied Physics EngineeringIntegrated CircuitsSilicon On InsulatorDefect ToleranceRelative Stability	2000	101
Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion A. Claverie, L.F. Giles, M. Omri, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceEngineeringMicrostructureExtended DefectsIntrinsic Impurity	1999	81
Thermal evolution of extended defects in implanted Si: A. Claverie, B. Colombeau, Gérard Assayag, Materials Science in Semiconductor Processing EngineeringPhysicsThermal EvolutionApplied PhysicsDefect Formation	2000	65
Transient enhanced diffusion in preamorphized silicon: the role of the surface N. E. B. Cowern, Daniel Alquier, M. Omri, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceEngineeringDiffusion ResistancePhysicsSurface Science	1999	49
Transient enhanced diffusion of boron in presence of end-of-range defects Caroline Bonafos, M. Omri, B. de Mauduit, Journal of Applied Physics EngineeringCubic Boron NitrideSilicon On InsulatorBoropheneBoron Nitride	1997	48
Is there an effect of the proximity of a “free-surface” on the formation of End-Of-Range defects? M. Omri, Caroline Bonafos, A. Claverie, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceEngineeringCrystalline DefectsPhysicsSurface Science	1996	28
Interstitial trapping efficiency of C+ implanted into preamorphised silicon — control of EOR defects F. Cristiano, Caroline Bonafos, A. Nejim, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials ScienceIon ImplantationEngineeringCrystalline DefectsStress-induced Leakage Current	1997	24
Estimation of the Number of Interstitial Atoms Injected in Silicon during Thin Oxide Formation D. Skarlatos, M. Omri, A. Claverie, Journal of The Electrochemical Society EngineeringIntegrated CircuitsSilicon On InsulatorAverage Interstitial SupersaturationIon Implantation	1999	23
Magnetization and ferromagnetic resonance studies in Co/V multilayers M. Lassri, M. Omri, H. Ouahmane, Physica B Condensed Matter Co/v MultilayersMagnetismFerromagnetismSpintronicsEngineering	2003	18
An investigation on the effect of high partial pressure of hydrogen on the nanocrystalline structure of silicon carbide thin films prepared by radio-frequency magnetron sputtering Mohsen Daouahi, M. Omri, Abdul Ghani Yousseph Kerm, Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy Materials EngineeringMaterials ScienceEngineeringHigh Partial PressureNanotechnology	2014	12

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