Concepedia

Nucleation, growth and dissolution of extended defects in implanted Si: impact on dopant diffusion

A. Claverie, L.F. Giles, M. Omri, B. de Mauduit, Gérard Assayag, D. Mathiot

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1999 · 81 citations · 17 references

DOI

Concepts

References

17

The kinetics of precipitation from supersaturated solid solutions

I.M. Lifshitz, V.V. Slyozov · Journal of Physics and Chemistry of Solids · 1961 · 8.3K citations

, , +12

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 619 citations

, , +17

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 541 citations

, , +17

Transient Phosphorus Diffusion Below the Amorphization Threshold

M.D. Giles · Journal of The Electrochemical Society · 1991 · 322 citations

, , +17

Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

A. E. Michel, W. Rausch, Paul Ronsheim et al. · Applied Physics Letters · 1987 · 211 citations

, , +17