A. E. Michel

Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

A. E. Michel, W. Rausch, Paul Ronsheim et al. · Applied Physics Letters · 1987 · 211 citations

Decay Time, Engineering, Silicon On Insulator +16

Transient boron diffusion in ion-implanted crystalline and amorphous silicon

T. O. Sedgwick, A. E. Michel, V. R. Deline et al. · Journal of Applied Physics · 1988 · 173 citations

Materials Science, Boron Profile, Ion Implantation +10

Shallow junctions by high-dose As implants in Si: experiments and modeling

M. Y. Tsai, F. F. Morehead, J. E. E. Baglin et al. · Journal of Applied Physics · 1980 · 169 citations

Shallow Junctions, High Conductivity, Engineering +17

Boron, phosphorus, and arsenic diffusion in TiSi2

P. Gas, V. R. Deline, F. M. d’Heurle et al. · Journal of Applied Physics · 1986 · 100 citations · Full text

Implantation damage and the anomalous transient diffusion of ion-implanted boron

A. E. Michel, W. Rausch, Paul Ronsheim · Applied Physics Letters · 1987 · 100 citations

Point Defects, Engineering, Implantation Damage +16