A. E. Michel - Concepedia

Author

A. E. Michel

IBM Research - Thomas J. Watson Research Center

Also Known As

A Michel, A. E. Michel, A. Michel, A.E. MICHEL, A.E. Michel, Ancy Michel

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

IBM Research - Thomas J. Watson Research Center IBM (United States)

About

A. E. Michel is an author at IBM Research - Thomas J. Watson Research Center specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	30	1.5K
2	Applied Physics	19	27	1.5K
3	Education	1	1	11
4	Medicine	1	1	13
5	Natural Sciences	1	1	20

A. E. Michel

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Rapid annealing and the anomalous diffusion of ion implanted boron into silicon A. E. Michel, W. Rausch, Paul Ronsheim, Applied Physics Letters Decay TimeEngineeringSilicon On InsulatorSemiconductor DeviceSemiconductors	1987	211
Transient boron diffusion in ion-implanted crystalline and amorphous silicon T. O. Sedgwick, A. E. Michel, V. R. Deline, Journal of Applied Physics Materials ScienceBoron ProfileIon ImplantationBoron DiffusionEngineering	1988	173
Shallow junctions by high-dose As implants in Si: experiments and modeling M. Y. Tsai, F. F. Morehead, J. E. E. Baglin, Journal of Applied Physics Shallow JunctionsHigh ConductivityEngineeringIntegrated CircuitsSilicon On Insulator	1980	169
Boron, phosphorus, and arsenic diffusion in TiSi2 P. Gas, V. R. Deline, F. M. d’Heurle, Journal of Applied Physics	1986	100
Implantation damage and the anomalous transient diffusion of ion-implanted boron A. E. Michel, W. Rausch, Paul Ronsheim Applied Physics Letters Point DefectsEngineeringImplantation DamagePoint Defect ClustersSilicon On Insulator	1987	100
Channeling in low energy boron ion implantation A. E. Michel, R. H. Kastl, Sebastian Mäder, Applied Physics Letters Tilt AngleIon ImplantationEngineeringCrystalline DefectsPhysics	1984	95
GaAs Injection Laser with Novel Mode Control and Switching Properties Marshall I. Nathan, J. C. Marinace, R. F. Rutz, Journal of Applied Physics EngineeringLaser ScienceLaser ApplicationsLaser MaterialInjection Laser	1965	83
The diffusion of elements implanted in films of cobalt disilicide P. Gaś, A. Charaı̈, F. K. LeGoues, Journal of Applied Physics EngineeringChemistryChemical DepositionSemiconductorsLattice Diffusion	1988	61
The poly-single crystalline silicon interface C. Y. Wong, A. E. Michel, R. Isaac, Journal of Applied Physics Materials ScienceMaterials EngineeringEngineeringFlexible ElectronicsSurface Science	1984	60
Annealing properties of ion-implanted <i>p-n</i> junctions in silicon A. E. Michel, F. F. Fang, Er Pan Journal of Applied Physics Materials ScienceSemiconductorsElectrical EngineeringIon ImplantationSurface Area	1974	53

Page 1