W. Rausch

Rapid annealing and the anomalous diffusion of ion implanted boron into silicon

A. E. Michel, W. Rausch, Paul Ronsheim et al. · Applied Physics Letters · 1987 · 211 citations

Decay Time, Engineering, Silicon On Insulator +16

High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

P. Agnello, T. Ivers, C. Warm et al. · 2006 · 115 citations

Engineering, Vlsi Design, Enhanced Strain +21

Implantation damage and the anomalous transient diffusion of ion-implanted boron

A. E. Michel, W. Rausch, Paul Ronsheim · Applied Physics Letters · 1987 · 100 citations

Point Defects, Engineering, Implantation Damage +16

Partially-depleted SOI technology for digital logic

G. Shahidi, A. Ajmera, F. Assaderaghi et al. · 2003 · 71 citations

Hardware Security, Electrical Engineering, Soi Technology +14

A 0.25 μm CMOS SOI technology and its application to 4 Mb SRAM

D. Schepis, F. Assaderaghi, D. S. Yee et al. · 2002 · 51 citations

Low-power Electronics, Electrical Engineering, Engineering +10