Thermal evolution of extended defects in implanted Si:

A Monte Carlo computer program for the transport of energetic ions in amorphous targets

J.P. Biersack, L.G. Haggmark · Nuclear Instruments and Methods · 1980 · 4.7K citations

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Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 619 citations

Engineering, Materials Engineering, Materials Science +17

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 541 citations

Engineering, Materials Engineering, Materials Science +17

A systematic analysis of defects in ion-implanted silicon

K. S. Jones, S.G. Prussin, E. R. Weber · Applied Physics A · 1988 · 506 citations

Engineering, Materials Science, Electronic Materials +13

Transient Phosphorus Diffusion Below the Amorphization Threshold

M.D. Giles · Journal of The Electrochemical Society · 1991 · 322 citations

Engineering, Materials Engineering, Materials Science +17