Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process

The black silicon method II:The effect of mask material and loading on the reactive ion etching of deep silicon trenches

Henri Jansen, M. de Boer, Johannes Faas Burger et al. · Microelectronic Engineering · 1995 · 146 citations · Full text

Electrical Engineering, Ion Implantation, Engineering +11

Passivation mechanisms in cryogenic SF₆/O₂etching process

Rémi Dussart, Mohamed Boufnichel, G. Marcos et al. · Journal of Micromechanics and Microengineering · 2003 · 105 citations

Materials Science, Chemical Engineering, Engineering +12

Sidewall surface chemistry in directional etching processes

G. S. Oehrlein, Yukinori Kurogi · Materials Science and Engineering R Reports · 1998 · 93 citations

Materials Science, Engineering, Microfabrication +5

Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing

Mohamed Boufnichel, S. Aachboun, F. Grangeon et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 92 citations

Engineering, Mechanical Engineering, Deep Trenches +18

Reaction of atomic fluorine with silicon

Ken Ninomiya, Keizô Suzuki, Shigeru Nishimatsu et al. · Journal of Applied Physics · 1985 · 72 citations

Chemical Engineering, Engineering, Nanotechnology +15