Rémi Dussart - Concepedia

Author

Rémi Dussart

Groupe de Recherches sur l'Energétique des Milieux Ionisés ORCID

Also Known As

Bedra, L., DUSSART, Remi, Dussart Remi, Dussart, R, Dussart, R., Dussart, Remi, Dussart, Rémi, R Dussart, R. Dussart, Ranson, Pierre

356

Publications

2.3K

Citations

H-Index

Concepts

All Affiliations

Groupe de Recherches sur l'Energétique des Milieux Ionisés Université d'Orléans Centre National de la Recherche Scientifique STMicroelectronics (France)The University of Texas at Dallas

About

Rémi Dussart is an author at Groupe de Recherches sur l'Energétique des Milieux Ionisés specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	33	1.3K
2	Applied Physics	19	26	1.1K
3	Education	2	2	62
4	Health Sciences	2	2	49
5	Natural Sciences	2	2	52

Rémi Dussart

Publications

Citations

H-Index

Page 1

	Year	Citations
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies Rémi Dussart, Thomas Tillocher, Philippe Lefaucheux, Journal of Physics D Applied Physics	2014	255
Passivation mechanisms in cryogenic SF<sub>6</sub>/O<sub>2</sub>etching process Rémi Dussart, Mohamed Boufnichel, G. Marcos, Journal of Micromechanics and Microengineering Materials ScienceChemical EngineeringEngineeringPhysicsCorrosion	2003	105
Future of plasma etching for microelectronics: Challenges and opportunities G. S. Oehrlein, Stephan M. Brandstadter, Robert L. Bruce, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Materials ScienceElectrical EngineeringDigital TwinsEngineeringPlasma Electronics	2024	103
Si O x F y passivation layer in silicon cryoetching X. Mellhaoui, Rémi Dussart, Thomas Tillocher, Journal of Applied Physics EngineeringSilicon CryoetchingOptoelectronic DevicesIntegrated CircuitsSilicon On Insulator	2005	94
Silicon columnar microstructures induced by an SF<sub>6</sub>/O<sub>2</sub>plasma Rémi Dussart, X. Mellhaoui, Thomas Tillocher, Journal of Physics D Applied Physics Materials SciencePlasma ElectronicsEngineeringPhysicsMicroscopy	2005	87
<i>In situ</i> x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process J. Péreira, Laurianne Pichon, Rémi Dussart, Applied Physics Letters EngineeringOptoelectronic DevicesVacuum DeviceChemistrySf6/o2 Cryoetching Process	2009	82
Deep GaN etching by inductively coupled plasma and induced surface defects Julien Ladroue, Aline Meritan, Mohamed Boufnichel, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringCl2/ar PlasmasGan Dislocation DensityPlasma ProcessingNanoelectronics	2010	63
Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process Mohamed Boufnichel, Philippe Lefaucheux, S. Aachboun, Microelectronic Engineering EngineeringPhysicsMicrofabricationApplied PhysicsCryogenic Process	2004	58
Measuring the energy flux at the substrate position during magnetron sputter deposition processes Pierre‐Antoine Cormier, A. Balhamri, Anne‐Lise Thomann, Journal of Applied Physics Hipims DischargeEngineeringIon Beam InstrumentationVacuum DeviceDc Magnetron Sputtering	2013	48
IR emission from the target during plasma magnetron sputter deposition Pierre‐Antoine Cormier, Anne‐Lise Thomann, V. Dolique, Thin Solid Films EngineeringPhysicsApplied PhysicsIr EmissionPlasma Science	2013	46

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