Thomas Tillocher

Publications

1.3K

Citations

H-Index

2003

Active since

Affiliations

Groupe de Recherches sur l'Energétique des Milieux Ionisés(Current)

Centre National de la Recherche Scientifique

Université d'Orléans

STMicroelectronics (France)

The University of Texas at Dallas

Thomas Tillocher is an author at Groupe de Recherches sur l'Energétique des Milieux Ionisés specializing in engineering, applied physics, and materials science.

ORCID

Top concepts

EngineeringApplied PhysicsMaterial SciencePhysicsSurface ScienceMicroelectronicsMicrofabricationMaterials EngineeringThin FilmsIntegrated Circuits

Publications per year

2003–2023

Publications

Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

Rémi Dussart, Thomas Tillocher, Philippe Lefaucheux et al. · Journal of Physics D Applied Physics · 2014 · 255 citations

Passivation mechanisms in cryogenic SF6/O2etching process

Rémi Dussart, Mohamed Boufnichel, G. Marcos et al. · Journal of Micromechanics and Microengineering · 2003 · 105 citations

Materials Science, Chemical Engineering, Engineering +12

Si O x F y passivation layer in silicon cryoetching

X. Mellhaoui, Rémi Dussart, Thomas Tillocher et al. · Journal of Applied Physics · 2005 · 94 citations

Engineering, Silicon Cryoetching, Optoelectronic Devices +18

Silicon columnar microstructures induced by an SF6/O2plasma

Rémi Dussart, X. Mellhaoui, Thomas Tillocher et al. · Journal of Physics D Applied Physics · 2005 · 87 citations

Materials Science, Plasma Electronics, Engineering +15

Boron acceptor concentration in diamond from excitonic recombination intensities

Julien Barjon, Thomas Tillocher, Nada Habka et al. · Physical Review B · 2011 · 50 citations

Materials Science, Diamond-like Carbon, Boron Nitride +12

Rows per page

1–5 of 36