Mohamed Boufnichel

Plasma cryogenic etching of silicon: from the early days to today's advanced technologies

Rémi Dussart, Thomas Tillocher, Philippe Lefaucheux et al. · Journal of Physics D Applied Physics · 2014 · 255 citations

Passivation mechanisms in cryogenic SF₆/O₂etching process

Rémi Dussart, Mohamed Boufnichel, G. Marcos et al. · Journal of Micromechanics and Microengineering · 2003 · 105 citations

Materials Science, Chemical Engineering, Engineering +12

Si O x F y passivation layer in silicon cryoetching

X. Mellhaoui, Rémi Dussart, Thomas Tillocher et al. · Journal of Applied Physics · 2005 · 94 citations

Engineering, Silicon Cryoetching, Optoelectronic Devices +18

Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing

Mohamed Boufnichel, S. Aachboun, F. Grangeon et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 92 citations

Engineering, Mechanical Engineering, Deep Trenches +18

<i>In situ</i> x-ray photoelectron spectroscopy analysis of SiOxFy passivation layer obtained in a SF6/O2 cryoetching process

J. Péreira, Laurianne Pichon, Rémi Dussart et al. · Applied Physics Letters · 2009 · 82 citations

Engineering, Optoelectronic Devices, Vacuum Device +16