Shigeru Nishimatsu - Concepedia

Author

Shigeru Nishimatsu

Hitachi (Japan)

Also Known As

S. NISHIMATSU, S. Nishimatsu, Shigeru NISHIMATSU, Shigeru Nishimatsu, Shigeru Nishimatsu Shigeru Nishimatsu

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Hitachi (Japan)

About

Shigeru Nishimatsu is an author at Hitachi (Japan) specializing in applied physics, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	22	1K
2	Applied Physics	16	20	989
3	Chemical Engineering	3	3	141
4	Natural Sciences	2	2	45
5	Health Sciences	1	1	16

Shigeru Nishimatsu

Publications

Citations

H-Index

Page 1

	Year	Citations
Grain Growth Mechanism of Heavily Phosphorus‐Implanted Polycrystalline Silicon Yasuo Wada, Shigeru Nishimatsu Journal of The Electrochemical Society Materials ScienceSemiconductorsEngineeringCrystalline DefectsGrain Growth	1978	246
Radiation Damage in SiO<sub>2</sub>/Si Induced by VUV Photons Takashi Yunogami, Tatsumi Mizutani, Keizô Suzuki, Japanese Journal of Applied Physics SemiconductorsSio 2Semiconductor TechnologyEngineeringPhysics	1989	132
Ac Surface Photovoltages in Strongly-Inverted Oxidized p-Type Silicon Wafers<sup>*</sup> Chusuke Munakata, Shigeru Nishimatsu, Noriaki Honma, Japanese Journal of Applied Physics Electrical EngineeringSemiconductor DeviceEngineeringPhysicsSolar Power	1984	87
Reaction of atomic fluorine with silicon Ken Ninomiya, Keizô Suzuki, Shigeru Nishimatsu, Journal of Applied Physics Chemical EngineeringEngineeringNanotechnologyEtch RateSurface Science	1985	72
Analysis of ac Surface Photovoltages in a Depleted Oxidized p-Type Silicon Wafer Chusuke Munakata, Shigeru Nishimatsu Japanese Journal of Applied Physics Electrical EngineeringEngineeringApplied PhysicsBuilding-integrated PhotovoltaicsSemiconductor Material	1986	61
Sputtering yield and radiation damage by neutral beam bombardment Tatsumi Mizutani, Shigeru Nishimatsu Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Electrical EngineeringIon ImplantationEngineeringCrystalline DefectsSurface Science	1988	52
Radio-frequency biased microwave plasma etching technique: A method to increase SiO2 etch rate Keizô Suzuki, Ken Ninomiya, Shigeru Nishimatsu, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Substrate Surface PotentialElectrical EngineeringPlasma ElectronicsEngineeringRadio Frequency	1985	48
Anisotropic etching of polycrystalline silicon with a hot Cl2 molecular beam Keizô Suzuki, Susumu Hiraoka, Shigeru Nishimatsu Journal of Applied Physics Optical MaterialsEngineeringSilicon On InsulatorAnisotropic EtchingElectronic Devices	1988	40
Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO<sub>2</sub> Grown on Si Ken’etsu Yokogawa, Yusuke Yajima, Tatsumi Mizutani, Japanese Journal of Applied Physics EngineeringOptoelectronic DevicesIntegrated CircuitsVacuum DeviceSemiconductor Nanostructures	1990	38
An experimental system for surface reaction studies in microwave plasma etching Ken Ninomiya, Keizô Suzuki, Shigeru Nishimatsu, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena EngineeringSurface Reaction StudiesPlasma ProcessingMicrowave Plasma EtchingChemical Engineering	1984	36

Page 1