Concepedia

P. Ranson

PR

Statistics

Publications

51

Citations

1.9K

H-Index

28

Active since

1971

Affiliations

Groupe de Recherches sur l'Energétique des Milieux Ionisés(Current)

Université d'Orléans

Centre National de la Recherche Scientifique

Sorbonne Université

STMicroelectronics (France)

P. Ranson is an author at Groupe de Recherches sur l'Energétique des Milieux Ionisés specializing in applied physics, engineering, and physics.

Top concepts

EngineeringApplied PhysicsPhysicsNatural SciencesMaterial ScienceSpectroscopyChemistryMicroelectronicsCondensed Matter PhysicsSurface Science

Publications per year

1971–2011

51

Publications

51

Passivation mechanisms in cryogenic SF<sub>6</sub>/O<sub>2</sub>etching process

Rémi Dussart, Mohamed Boufnichel, G. Marcos et al. · Journal of Micromechanics and Microengineering · 2003 · 105 citations

Materials Science, Chemical Engineering, Engineering +12

Si O x F y passivation layer in silicon cryoetching

X. Mellhaoui, Rémi Dussart, Thomas Tillocher et al. · Journal of Applied Physics · 2005 · 94 citations

Engineering, Silicon Cryoetching, Optoelectronic Devices +18

Deep anisotropic etching of silicon

S. Aachboun, P. Ranson · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 93 citations

Materials Science, Deep Anisotropic Etching, High Density +14

Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing

Mohamed Boufnichel, S. Aachboun, F. Grangeon et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2002 · 92 citations

Engineering, Mechanical Engineering, Deep Trenches +18

Silicon columnar microstructures induced by an SF<sub>6</sub>/O<sub>2</sub>plasma

Rémi Dussart, X. Mellhaoui, Thomas Tillocher et al. · Journal of Physics D Applied Physics · 2005 · 87 citations

Materials Science, Plasma Electronics, Engineering +15

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