Scaling of gate length in ultra-short channel heterostructure field effect transistors

Model for modulation doped field effect transistor

T. J. Drummond, H. Morkoç̌, K. Lee et al. · IEEE Electron Device Letters · 1982 · 206 citations

Engineering, Electrical Engineering, Materials Science +17

High transconductance and velocity overshoot in NMOS devices at the 0.1- mu m gate-length level

G.A. Sai-Halasz, M.R. Wordeman, D. P. Kern et al. · IEEE Electron Device Letters · 1988 · 169 citations

Engineering, Electrical Engineering, Microelectronics +14

DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs

P.C. Chao, M. S. Shur, R. C. Tiberio et al. · IEEE Transactions on Electron Devices · 1989 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Voltage-current characteristics of GaAs J-FET's in the hot electron range

K. Lehovec, R. Zuleeg · Solid-State Electronics · 1970 · 119 citations

Engineering, Electrical Engineering, Physics +15

A 40 nm gate length n-MOSFET

Mizuki Ono, M. Saito, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1995 · 114 citations

Engineering, Electrical Engineering, Materials Science +17