Concepedia

Ni fully silicided gates for 45nm CMOS applications

J. A. Kittl, A. Lauwers, Małgorzata Pawlak, M.J.H. van Dal, A. Veloso, K.G. Anil, Geoffrey Pourtois, C. Demeurisse, T. Schram, Bert Brijs,

Microelectronic Engineering · 2005 · 37 citations · 4 references

Concepts

EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignDevice ScalingIntegrated Circuit DesignNanoelectronicsPhysical DesignVery-large-scale Integration LayoutCmos Logic DesignCmos ScalingGate Oxide Thickness Effects

References

4

Towards implementation of a nickel silicide process for CMOS technologies

C. Lavoie, F. M. d’Heurle, Christophe Detavernier et al. · Microelectronic Engineering · 2003 · 406 citations

Engineering, Electrical Engineering, Materials Engineering +12

Investigation of Polycrystalline Nickel Silicide Films as a Gate Material

Ming Qin, V.M.C. Poon, Stephen Chi Ho Ho · Journal of The Electrochemical Society · 2001 · 79 citations

Engineering, Materials Engineering, Materials Science +17

Demonstration of fully Ni-silicided metal gates on HfO/sub 2/ based high-k gate dielectrics as a candidate for low power applications

K.G. Anil, A. Veloso, Stefan Kubicek et al. · 2004 · 35 citations

Engineering, Electrical Engineering, Materials Science +17

Applications of Ni-based silicides to 45 nm CMOS and Beyond

J. A. Kittl, A. Lauwers, O. Chamirian et al. · MRS Proceedings · 2004 · 25 citations

Engineering, Electrical Engineering, Materials Science +13