Materials science forum · 2012 · 24 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDefects In Electronic MaterialsDevice ReliabilityDislocations In SemiconductorsSemiconductor DefectsSemiconductor ReliabilitySemiconductor SurfacesDry OxidationEpitaxial DefectsGate Oxide DegradationGate OxidesReliability DegradationSilicon CarbideSilicon Carbide Power DevicesSurface Defects
Influences of wafer-related defect and gate oxide fabrication process on MOS characteristics with gate oxides thermally grown on 4H-SiC (0001) wafer have been investigated for a realization of SiC MOS power devices. The SiC MOS characteristics depend on the gate oxide fabrication process, and are improved by the increase of DRY oxidation temperature and the applying of N2O and H2 POAs. In addition, it was clearly shown that predominant origins of SiC MOS reliability degradation are wafer-related defects such as dislocation and surface defects of epitaxial layer. Moreover, the planarization of SiC epitaxial layer surface using a CMP treatment is effective technique for the improvement of SiC MOS reliability.
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