S. Dreiner

Hafnium silicide formation on Si(100) upon annealing

Abner de Siervo, C.R. Flüchter, D. Weier et al. · Physical Review B · 2006 · 38 citations

Materials Science, Materials Engineering, Sharp Interface +13

High temperature SOI CMOS technology and circuit realization for applications up to 300°C

Holger Kappert, Norbert Kordas, S. Dreiner et al. · 2015 · 35 citations

Engineering, Vlsi Design, Integrated Circuits +16

Determination of the source of two extra components in Si 2p photoelectron spectra of the SiO2/Si(1 0 0 ) interface

S. Dreiner, M. Schürmann, Michael Krause et al. · Journal of Electron Spectroscopy and Related Phenomena · 2005 · 24 citations

Ii-vi Semiconductor, Optical Materials, Si 2P +8

High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology

K. Grella, S. Dreiner, A. Schmidt et al. · Additional Conferences (Device Packaging HiTEC HiTEN & CICMT) · 2012 · 15 citations

Materials Science, Electrical Engineering, High Temperature Characterization +12

Reliability of CMOS on Silicon-on-Insulator for Use at 250 $^{\circ}\hbox{C}$

K. Grella, S. Dreiner, H. Vogt et al. · IEEE Transactions on Device and Materials Reliability · 2013 · 14 citations

Engineering, Integrated Circuits, Silicon On Insulator +16