Resistive switching behavior in TiN/HfO<inf>2</inf>/Ti/TiN devices

Abstract

This work reports the bipolar resistive switching behavior of more than 100 back-end-of-line (BEOL) integrated 600×600nm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> TiN/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Ti/TiN MIM devices in a 4 kbit memory array. Reliable current-voltage switching characteristics were only observed for devices with a thickness ratio of 1 (10 nm HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /10nm Ti), indicating the importance of the interface chemistry of the Ti/HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface. Moreover, the devices show good inter-cell uniformity and thus demonstrate promising prospects for embedded non-volatile memory (eNVM) applications.