Concepedia

Author

Damian Walczyk

Brandenburg University of Technology Cottbus-Senftenberg

Also Known As

D Walczyk, D. Walczyk, Damian Walczyk

24

Publications

1.1K

Citations

15

H-Index

37

Concepts

All Affiliations

Brandenburg University of Technology Cottbus-SenftenbergInstitut für Solartechnologien (Germany)Leibniz Institute for High Performance MicroelectronicsTechnische Universität BerlinUniversitat Autònoma de Barcelona
DW

About

Damian Walczyk is an author at Brandenburg University of Technology Cottbus-Senftenberg specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

15

15

1K

2

Applied Physics

12

12

918

3

Computer Engineering

3

3

107

4

Chemical Engineering

2

2

163

5

Chemistry

1

1

62

Damian Walczyk

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16

Publications

1.1K

Citations

15

H-Index

YearCitations

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

Christian Walczyk, Damian Walczyk, Thomas Schroeder,

IEEE Transactions on Electron Devices

2011

238

Towards forming-free resistive switching in oxygen engineered HfO2−x

S. U. Sharath, T. Bertaud, J. Kurian,

Applied Physics Letters

2014

175

Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

M. Sowińska, T. Bertaud, Damian Walczyk,

Applied Physics Letters

2012

101

Oxygen Vacancy Induced Room Temperature Ferromagnetism in Pr-Doped CeO<sub>2</sub> Thin Films on Silicon

Gang Niu, Erwin Hildebrandt, Markus Andreas Schubert,

ACS Applied Materials & Interfaces

2014

100

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Damian Walczyk, Ch. Walczyk, Thomas Schroeder,

Microelectronic Engineering

2011

64

<i>In-operando</i> and non-destructive analysis of the resistive switching in the Ti/HfO<sub>2</sub>/TiN-based system by hard x-ray photoelectron spectroscopy

T. Bertaud, M. Sowińska, Damian Walczyk,

Applied Physics Letters

2012

64

Engineering of the Chemical Reactivity of the Ti/HfO<sub>2</sub> Interface for RRAM: Experiment and Theory.

Pauline Calka, M. Sowińska, T. Bertaud,

ACS Applied Materials & Interfaces

2014

62

Impact of Intercell and Intracell Variability on Forming and Switching Parameters in RRAM Arrays

Alessandro Grossi, Damian Walczyk, Cristian Zambelli,

IEEE Transactions on Electron Devices

2015

59

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

M. Sowińska, T. Bertaud, Damian Walczyk,

Journal of Applied Physics

2014

52

Field-Driven Hopping Transport of Oxygen Vacancies in Memristive Oxide Switches with Interface-Mediated Resistive Switching

Nan Du, Niveditha Manjunath, Yuan Li,

Physical Review Applied

2018

45

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