S. U. Sharath

Towards forming-free resistive switching in oxygen engineered HfO2−x

S. U. Sharath, T. Bertaud, J. Kurian et al. · Applied Physics Letters · 2014 · 175 citations

Electrical Engineering, Engineering, Nanoelectronics +11

Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO<i>_x</i> based Memristive Devices

S. U. Sharath, S. Vogel, Leopoldo Molina‐Luna et al. · Advanced Functional Materials · 2017 · 128 citations

Materials Science, Hafnium Oxide, Electrical Engineering +14

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Stefan Petzold, Alexander Zintler, Robert Eilhardt et al. · Advanced Electronic Materials · 2019 · 81 citations · Full text

Engineering, Emerging Memory Technology, Phase Change Memory +17

Thickness independent reduced forming voltage in oxygen engineered HfO₂ based resistive switching memories

S. U. Sharath, J. Kurian, Philipp Komissinskiy et al. · Applied Physics Letters · 2014 · 67 citations · Full text

Engineering, Oxidation Resistance, Emerging Memory Technology +17

Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaO<i>x</i>/Pt based ReRAM

S. U. Sharath, Mathew J. Joseph, S. Vogel et al. · Applied Physics Letters · 2016 · 65 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +14