S. U. Sharath

Towards forming-free resistive switching in oxygen engineered HfO2−x

S. U. Sharath, T. Bertaud, J. Kurian et al. · Applied Physics Letters · 2014 · 177 citations

Natural Sciences, Materials Engineering, Materials Science +17

Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO<i>_x</i> based Memristive Devices

S. U. Sharath, S. Vogel, Leopoldo Molina‐Luna et al. · Advanced Functional Materials · 2017 · 130 citations

Natural Sciences, Materials Engineering, Materials Science +17

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Stefan Petzold, Alexander Zintler, Robert Eilhardt et al. · Advanced Electronic Materials · 2019 · 82 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Thickness independent reduced forming voltage in oxygen engineered HfO₂ based resistive switching memories

S. U. Sharath, J. Kurian, Philipp Komissinskiy et al. · Applied Physics Letters · 2014 · 69 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaO<i>x</i>/Pt based ReRAM

S. U. Sharath, Mathew J. Joseph, S. Vogel et al. · Applied Physics Letters · 2016 · 65 citations

Natural Sciences, Materials Engineering, Materials Science +17