S. U. Sharath - Concepedia

Author

S. U. Sharath

Technical University of Darmstadt ORCID

Also Known As

S U Sharath, S. U. Sharath, S.U. Sharath, Sankaramangalam U. Sharath, Sankaramangalam Ulhas Sharath, Ulhas Sharath, S.

Publications

797

Citations

H-Index

Concepts

All Affiliations

Technical University of Darmstadt Brandenburg University of Technology Cottbus-Senftenberg Institut für Solartechnologien (Germany)Leibniz Institute for High Performance Microelectronics Xi'an Jiaotong University

About

S. U. Sharath is an author at Technical University of Darmstadt specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	661
2	Applied Physics	9	9	643
3	Computer Engineering	3	3	106
4	Chemical Engineering	1	1	18
5	Chemistry	1	1	18

S. U. Sharath

Publications

748

Citations

H-Index

Page 1

	Year	Citations
Towards forming-free resistive switching in oxygen engineered HfO2−x S. U. Sharath, T. Bertaud, J. Kurian, Applied Physics Letters Electrical EngineeringEngineeringNanoelectronicsOxide ElectronicsApplied Physics	2014	175
Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO<i><sub>x</sub></i> based Memristive Devices S. U. Sharath, S. Vogel, Leopoldo Molina‐Luna, Advanced Functional Materials Materials ScienceHafnium OxideElectrical EngineeringElectronic DevicesEngineering	2017	128
Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices Stefan Petzold, Alexander Zintler, Robert Eilhardt, Advanced Electronic Materials EngineeringEmerging Memory TechnologyPhase Change MemoryMemory DeviceMemory Devices	2019	81
Thickness independent reduced forming voltage in oxygen engineered HfO<sub>2</sub> based resistive switching memories S. U. Sharath, J. Kurian, Philipp Komissinskiy, Applied Physics Letters EngineeringOxidation ResistanceEmerging Memory TechnologyConducting FilamentLayer Thickness	2014	67
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaO<i>x</i>/Pt based ReRAM S. U. Sharath, Mathew J. Joseph, S. Vogel, Applied Physics Letters Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringOxidation Resistance	2016	65
Heavy Ion Radiation Effects on Hafnium Oxide-Based Resistive Random Access Memory Stefan Petzold, S. U. Sharath, Jonas Lemke, IEEE Transactions on Nuclear Science Non-volatile MemoryElectrical EngineeringIon ImplantationHafnium Oxide-based RramEngineering	2019	41
Electron holography on HfO<sub>2</sub>/HfO<sub>2−<i>x</i></sub>bilayer structures with multilevel resistive switching properties Gang Niu, Markus Andreas Schubert, S. U. Sharath, Nanotechnology	2017	36
Gradual reset and set characteristics in yttrium oxide based resistive random access memory Stefan Petzold, Eszter Piros, S. U. Sharath, Semiconductor Science and Technology Non-volatile MemoryEngineeringPhase Change MemoryNanoelectronicsGradual Reset	2019	33
Analysis and simulation of the multiple resistive switching modes occurring in HfO<i>x</i>-based resistive random access memories using memdiodes Stefan Petzold, E. Miranda, S. U. Sharath, Journal of Applied Physics Non-volatile MemoryEngineeringMemdiode ModelEmerging Memory TechnologyPhase Change Memory	2019	32
Role of Oxygen Defects in Conductive-Filament Formation in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi mathvariant="normal">Y</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>-Based Analog RRAM Devices as Revealed by Fluctuation Spectroscopy Eszter Piros, Martin Lonsky, Stefan Petzold, Physical Review Applied	2020	28

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