Robert Eilhardt

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Stefan Petzold, Alexander Zintler, Robert Eilhardt et al. · Advanced Electronic Materials · 2019 · 82 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties

Nico Kaiser, Tobias Vogel, Alexander Zintler et al. · ACS Applied Materials & Interfaces · 2021 · 71 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Stefan Petzold, Eszter Piros, Robert Eilhardt et al. · Advanced Electronic Materials · 2020 · 36 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Enhanced thermal stability of yttrium oxide-based RRAM devices with inhomogeneous Schottky-barrier

Eszter Piros, Stefan Petzold, Alexander Zintler et al. · Applied Physics Letters · 2020 · 33 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Analysis and simulation of the multiple resistive switching modes occurring in HfO<i>x</i>-based resistive random access memories using memdiodes

Stefan Petzold, E. Miranda, S. U. Sharath et al. · Journal of Applied Physics · 2019 · 32 citations · Full text

Engineering, Electrical Engineering, Materials Engineering +17