Eszter Piros

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Stefan Petzold, Alexander Zintler, Robert Eilhardt et al. · Advanced Electronic Materials · 2019 · 81 citations · Full text

Engineering, Emerging Memory Technology, Phase Change Memory +17

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties

Nico Kaiser, Tobias Vogel, Alexander Zintler et al. · ACS Applied Materials & Interfaces · 2021 · 59 citations · Full text

Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide

Nico Kaiser, Young-Joon Song, Tobias Vogel et al. · ACS Applied Electronic Materials · 2023 · 42 citations · Full text

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Stefan Petzold, Eszter Piros, Robert Eilhardt et al. · Advanced Electronic Materials · 2020 · 35 citations · Full text

Semiconductors, Multi‐level Quantization, Electrical Engineering +15

Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Stefan Petzold, Eszter Piros, S. U. Sharath et al. · Semiconductor Science and Technology · 2019 · 33 citations · Full text

Non-volatile Memory, Engineering, Phase Change Memory +16