Tobias Vogel

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Stefan Petzold, Alexander Zintler, Robert Eilhardt et al. · Advanced Electronic Materials · 2019 · 81 citations · Full text

Engineering, Emerging Memory Technology, Phase Change Memory +17

Defect-Stabilized Substoichiometric Polymorphs of Hafnium Oxide with Semiconducting Properties

Nico Kaiser, Tobias Vogel, Alexander Zintler et al. · ACS Applied Materials & Interfaces · 2021 · 59 citations · Full text

Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

Stefan Petzold, Eszter Piros, Robert Eilhardt et al. · Advanced Electronic Materials · 2020 · 35 citations · Full text

Semiconductors, Multi‐level Quantization, Electrical Engineering +15

Electrochemical Reduction and Oxidation of Ruddlesden–Popper-Type La₂NiO₃F₂ within Fluoride-Ion Batteries

Kerstin Wissel, Roland Schoch, Tobias Vogel et al. · Chemistry of Materials · 2021 · 33 citations · Full text

Additional Fluorination, Engineering, Electrode-electrolyte Interface +17

Analysis and simulation of the multiple resistive switching modes occurring in HfO<i>x</i>-based resistive random access memories using memdiodes

Stefan Petzold, E. Miranda, S. U. Sharath et al. · Journal of Applied Physics · 2019 · 32 citations · Full text

Non-volatile Memory, Engineering, Memdiode Model +16