Gradual reset and set characteristics in yttrium oxide based resistive random access memory

Abstract

Abstract This paper addresses the resistive switching behavior in yttrium oxide based resistive random access memory (RRAM) (TiN/yttrium oxide/Pt) devices. We report the coexistence of bipolar and unipolar resistive switching within a single device stack. For bipolar DC operation, the devices show gradual set and reset behavior with resistance ratio up to two orders of magnitude. By using nanosecond regime pulses (20 to 100 ns pulse width) of constant voltage amplitude, this gradual switching behavior could be utilized in tuning the resistance during set and reset spanning up to two orders of magnitude. This demonstrates that yttrium oxide based RRAM devices are alternative candidates for multibit operations and neuromorphic applications.