J. Kurian

Towards forming-free resistive switching in oxygen engineered HfO2−x

S. U. Sharath, T. Bertaud, J. Kurian et al. · Applied Physics Letters · 2014 · 175 citations

Electrical Engineering, Engineering, Nanoelectronics +11

Thickness independent reduced forming voltage in oxygen engineered HfO₂ based resistive switching memories

S. U. Sharath, J. Kurian, Philipp Komissinskiy et al. · Applied Physics Letters · 2014 · 67 citations · Full text

Engineering, Oxidation Resistance, Emerging Memory Technology +17

Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaO<i>x</i>/Pt based ReRAM

S. U. Sharath, Mathew J. Joseph, S. Vogel et al. · Applied Physics Letters · 2016 · 65 citations

Materials Science, Materials Engineering, Ii-vi Semiconductor +14

Synthesis and Characterization of Rare-Earth Barium Antimonates, a New Group of Complex Perovskites Suitable as Substrates for YBa2Cu3O7-δ Films

J. Kurian, J. Koshy, P. R. S. Wariar et al. · Journal of Solid State Chemistry · 1995 · 44 citations

Materials Science, Engineering, Perovskite Solar Cell +8

Growth of epitaxial CeO2 thin films on r-cut sapphire by molecular beam epitaxy

J. Kurian, M. Naito · Physica C Superconductivity · 2003 · 19 citations

Materials Science, Engineering, Crystal Growth Technology +7