Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfO<i>_x</i> based Memristive Devices

S. U. Sharath, S. Vogel, Leopoldo Molina‐Luna, +11

Advanced Functional Materials

Materials ScienceHafnium OxideElectrical EngineeringElectronic DevicesEngineering +12

Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaO<i>x</i>/Pt based ReRAM

S. U. Sharath, Mathew J. Joseph, S. Vogel, +5

Applied Physics Letters

Materials ScienceMaterials EngineeringIi-vi SemiconductorEngineeringOxidation Resistance +12

Exponential transformation of molecular orbitals

Jürg Hutter, Michele Parrinello, S. Vogel

The Journal of Chemical Physics

EngineeringChemical TransformationPhysicsNatural SciencesOccupied Orbitals +12

Sputtered Cadmium Oxide and Indium Oxide/Tin Oxide Films as Transparent Electrodes to Cadmium Sulfide

R. R. Mehta, S. Vogel

Journal of The Electrochemical Society

Optical MaterialsEngineeringIndium Oxide/tin OxideThin Film Process TechnologyChemical Deposition +17

Electron holography on HfO₂/HfO_2−<i>x</i>bilayer structures with multilevel resistive switching properties

Gang Niu, Markus Andreas Schubert, S. U. Sharath, +10

Nanotechnology

Vibrationally averaged spin densities on muons and protons in the hydroxyl and ethyl radicals

T. A. Claxton, Alison M. Graham, S. F. J. Cox, +3

Hyperfine Interactions

Ethyl RadicalsEngineeringNuclear PhysicsPhysicsSpin Densities +11

Retention in thin ferroelectric films

Bhim S. Sharma, S. Vogel, P. I. Prentky

Ferroelectrics

EngineeringFerroelectric FilmsThin Film Process TechnologyRemanent PolarizationThin Ferroelectric Films +16

Cluster calculations of muonium states in semiconductors

S. Vogel, M. Celio, D. Maric, +1

Journal of Physics Condensed Matter

EngineeringComputational ChemistryChemistryElectronic StructureSemiconductors +14

FIB based fabrication of an operative Pt/HfO2/TiN device for resistive switching inside a transmission electron microscope

Alexander Zintler, Ulrike Kunz, Yevheniy Pivak, +6

Ultramicroscopy

Materials ScienceEngineeringTunneling MicroscopyElectron MicroscopyElectron-beam Lithography +10

Passivation of boron in silicon by hydrogen and muonium: calculation of electric field gradients, quadrupole resonance frequencies and cross relaxation functions

Dj. M. Maric, P. F. Meier, S. Vogel, +3

Journal of Physics Condensed Matter

EngineeringMagnetic ResonanceElectric Field GradientsCross Relaxation FunctionsSilicon On Insulator +19