T. Bertaud

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

Christian Walczyk, Damian Walczyk, Thomas Schroeder et al. · IEEE Transactions on Electron Devices · 2011 · 238 citations

Semiconductors, Non-volatile Memory, Electrical Engineering +15

Towards forming-free resistive switching in oxygen engineered HfO2−x

S. U. Sharath, T. Bertaud, J. Kurian et al. · Applied Physics Letters · 2014 · 175 citations

Electrical Engineering, Engineering, Nanoelectronics +11

Hard x-ray photoelectron spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures

M. Sowińska, T. Bertaud, Damian Walczyk et al. · Applied Physics Letters · 2012 · 101 citations

Engineering, Oxidation Resistance, Electronic Modifications +16

Thickness independent reduced forming voltage in oxygen engineered HfO₂ based resistive switching memories

S. U. Sharath, J. Kurian, Philipp Komissinskiy et al. · Applied Physics Letters · 2014 · 67 citations · Full text

Engineering, Oxidation Resistance, Emerging Memory Technology +17

Resistive switching characteristics of CMOS embedded HfO2-based 1T1R cells

Damian Walczyk, Ch. Walczyk, Thomas Schroeder et al. · Microelectronic Engineering · 2011 · 64 citations

Electrical Engineering, Hfo2-based 1T1r, Engineering +4