Thomas Schroeder

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

Christian Walczyk, Damian Walczyk, Thomas Schroeder et al. · IEEE Transactions on Electron Devices · 2011 · 238 citations

Semiconductors, Non-volatile Memory, Electrical Engineering +15

Ultra‐Sensitive Graphene‐Plasmonic Hybrid Platform for Label‐Free Detection

Pu Wang, Owen Liang, Wei Zhang et al. · Advanced Materials · 2013 · 216 citations

Label-Free SERS Selective Detection of Dopamine and Serotonin Using Graphene-Au Nanopyramid Heterostructure

Pu Wang, Ming Xia, Owen Liang et al. · Analytical Chemistry · 2015 · 181 citations

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

E. Miranda, Christian Walczyk, Christian Wenger et al. · IEEE Electron Device Letters · 2010 · 179 citations

Engineering, Resistive Switching Effect, Charge Transport +19

Towards forming-free resistive switching in oxygen engineered HfO2−x

S. U. Sharath, T. Bertaud, J. Kurian et al. · Applied Physics Letters · 2014 · 175 citations

Electrical Engineering, Engineering, Nanoelectronics +11