Christian Walczyk

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

Christian Walczyk, Damian Walczyk, Thomas Schroeder et al. · IEEE Transactions on Electron Devices · 2011 · 238 citations

Semiconductors, Non-volatile Memory, Electrical Engineering +15

Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions

E. Miranda, Christian Walczyk, Christian Wenger et al. · IEEE Electron Device Letters · 2010 · 179 citations

Engineering, Resistive Switching Effect, Charge Transport +19

Geometric conductive filament confinement by nanotips for resistive switching of HfO2-RRAM devices with high performance

Gang Niu, Pauline Calka, Matthias Auf der Maur et al. · Scientific Reports · 2016 · 88 citations · Full text

<i>In-operando</i> and non-destructive analysis of the resistive switching in the Ti/HfO₂/TiN-based system by hard x-ray photoelectron spectroscopy

T. Bertaud, M. Sowińska, Damian Walczyk et al. · Applied Physics Letters · 2012 · 64 citations

X-ray Spectroscopy, Engineering, Inorganic Photochemistry +18

Engineering of the Chemical Reactivity of the Ti/HfO₂ Interface for RRAM: Experiment and Theory.

Pauline Calka, M. Sowińska, T. Bertaud et al. · ACS Applied Materials & Interfaces · 2014 · 62 citations · Full text

Engineering, Oxidation Resistance, Chemistry +16